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POWER TRANSISTOR. 2SC1610 Datasheet

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POWER TRANSISTOR. 2SC1610 Datasheet






2SC1610 TRANSISTOR. Datasheet pdf. Equivalent




2SC1610 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1610

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1610 DESCRIPTION ·With TO-3 package ·High current cap ability ·Fast switching speed APPLICAT IONS ·For high speed power switching a pplications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplifi ed outline (TO-3) and symbol DESCRIPTIO N ABSOLUTE MAXIMUM RA.
Manufacture

SavantIC

Datasheet
Download 2SC1610 Datasheet


SavantIC 2SC1610

2SC1610; TINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC P T Tj Tstg PARAMETER Collector-base volt age Collector-emitter voltage Emitter-b ase voltage Collector current Total pow er dissipation Junction temperature Sto rage temperature TC=25 Open emitter Ope n base Open collector CONDITIONS VALUE 150 100 6 10 100 175 -55~175 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rt h j-C PARAMETER Th.


SavantIC 2SC1610

ermal resistance junction to case MAX 1. 17 UNIT /W SavantIC Semiconductor www. DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTE RISTICS Tj=25 unless otherwise specifie d PARAMETER Collector-emitter sustainin g voltage Collector-base breakdown volt age Emitter-base breakdown voltage Coll ector-emitter saturation voltage Base-e mitter saturation .


SavantIC 2SC1610

voltage Collector cut-off current Collec tor cut-off current Emitter cut-off cur rent DC current gain CONDITIONS IC=0.1A ; IB=0 IC=1m A; IE=0 IE=1mA; IC=0 IC=10 A;IB=1 A IC=10 A;IB=1 A VCB=100V; IE=0 VCE=60V; IB=0 VEB=6V; IC=0 IC=5A ; VCE =5V 30 MIN 100 150 6 SYMBOL VCEO(SUS) V (BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICE O IEBO hFE 2SC1610 TYP. MAX UNIT V V V 1.0 2.0 0.1 1.

Part

2SC1610

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1610 DESCRIPTION ·With TO-3 package ·High current cap ability ·Fast switching speed APPLICAT IONS ·For high speed power switching a pplications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplifi ed outline (TO-3) and symbol DESCRIPTIO N ABSOLUTE MAXIMUM RA.
Manufacture

SavantIC

Datasheet
Download 2SC1610 Datasheet




 2SC1610
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2SC1610
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·For high speed power switching
applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
150
100
6
10
100
175
-55~175
UNIT
V
V
V
A
W
MAX
1.17
UNIT
/W




 2SC1610
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1610
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1m A; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A
VBEsat
Base-emitter saturation voltage
IC=10 A;IB=1 A
ICBO Collector cut-off current
VCB=100V; IE=0
ICEO Collector cut-off current
VCE=60V; IB=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=5A ; VCE=5V
MIN TYP. MAX UNIT
100 V
150 V
6V
1.0 V
2.0 V
0.1 mA
1.0 mA
0.1 mA
30 160
2




 2SC1610
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1610
Fig.2 Outline dimensions
3



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