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POWER TRANSISTOR. 2SC1619 Datasheet

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POWER TRANSISTOR. 2SC1619 Datasheet






2SC1619 TRANSISTOR. Datasheet pdf. Equivalent




2SC1619 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1619

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1619 DESCRIPTION ·With TO-3 package ·High current cap acity ·Wide safe oprating area APPLICA TIONS ·For audio frequency output appl ications PINNING(see fig.2) PIN 1 2 3 B ase Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATIN.
Manufacture

SavantIC

Datasheet
Download 2SC1619 Datasheet


SavantIC 2SC1619

2SC1619; GS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base vol tage Collector-emitter voltage Emitter- base voltage Collector current Collecto r current-peak Collector power dissipat ion Junction temperature Storage temper ature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 80 6 6 10 50 150 -55~150 UNIT V V V A A W Sav antIC Semiconducto.


SavantIC 2SC1619

r www.DataSheet4U.com Product Specifica tion Silicon NPN Power Transistors CHA RACTERISTICS Tj=25 unless otherwise spe cified PARAMETER Collector-emitter sust aining voltage Emitter-base breakdown v oltage Collector-emitter saturation vol tage Base-emitter saturation voltage Co llector cut-off current Emitter cut-off current DC current gain Transition fre quency CONDITIONS .


SavantIC 2SC1619

IC=100mA; IB=0 IE=1mA; IC=0 IC=4A;IB=0.4 A IC=4A;IB=0.4 A VCB=100V; IE=0 VEB=6V ; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 20 MIN 80 6 2SC1619 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE f T TYP. MAX UNIT V V 2.0 2.5 0.1 0.1 180 10 V V mA mA MHz 2 SavantIC Se miconductor www.DataSheet4U.com Produc t Specification Silicon NPN Power Tran sistors PACKAGE OU.

Part

2SC1619

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1619 DESCRIPTION ·With TO-3 package ·High current cap acity ·Wide safe oprating area APPLICA TIONS ·For audio frequency output appl ications PINNING(see fig.2) PIN 1 2 3 B ase Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATIN.
Manufacture

SavantIC

Datasheet
Download 2SC1619 Datasheet




 2SC1619
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High current capacity
·Wide safe oprating area
APPLICATIONS
·For audio frequency output applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC1619
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
TC=25
Tstg Storage temperature
VALUE
100
80
6
6
10
50
150
-55~150
UNIT
V
V
V
A
A
W




 2SC1619
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1619
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.4 A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=3A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=12V
80 V
6V
2.0 V
2.5 V
0.1 mA
0.1 mA
20 180
10 MHz
2




 2SC1619
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1619
Fig.2 Outline dimensions
3



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