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UPA2503 Dataheets PDF



Part Number UPA2503
Manufacturers NEC
Logo NEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet UPA2503 DatasheetUPA2503 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com µ PA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2503, which has a heat spreader, is N-channel applications of notebook computers. 0.65 TYP. PACKAGE DRAWING (Unit: mm) MOS Field Effect Transistor designed for power management FEATURES spreader. The land size is same as 8-pin TSSOP. • Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com µ PA2503 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA2503, which has a heat spreader, is N-channel applications of notebook computers. 0.65 TYP. PACKAGE DRAWING (Unit: mm) MOS Field Effect Transistor designed for power management FEATURES spreader. The land size is same as 8-pin TSSOP. • Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 8.0 A) • Low Ciss: 1200 pF TYP. (VDS = 10.0 V, VGS = 0 V) +0.05 0.25 −0.05 0.10 M • µ PA2503 has a thin surface mount package with a heat +0.1 1 2 3 4 5.8 ±0.1 6.4 ±0.1 8 7 6 5 3.15 ±0.15 3 ±0.1 0.17 ±0.05 0.8 MAX. 0.10 S ORDERING INFORMATION PART NUMBER PACKAGE 8PIN HWSON 0 −0 µ PA2503TM 0.75 ±0.15 2.2 ±0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 4.15 ±0.2 0.85 ±0.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30.0 ±20.0 ±16.0 ±64.0 2.7 150 −55 to +150 16.0 25.6 V V A A W °C °C A mJ Gate Protection Diode Source Gate Drain Current (pulse) EQUIVALENT CIRCUIT Drain Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Note3 IAS EAS Body Diode Single Avalanche Energy Note3 2 Notes 1. Mounted on FR-4 board of 25 cm x 1.6 mm, PW ≤ 10 sec 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20.0 → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16682EJ1V0DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan 2003 µ PA2503 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS www.DataSheet4U.com Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 30.0 V, VGS = 0 V VGS = ±18.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 8.0 A VGS = 10.0 V, ID = 8.0 A VGS = 4.5 V, ID = 8.0 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 15.0 V, ID = 8.0 A VGS = 10.0 V RG = 10 Ω MIN. TYP. MAX. 1.0 ±10.0 UNIT µA µA V S 1.5 5 7.5 11.0 1200 320 190 12 17 52 15 2.5 Drain to Source On-state Resistance 9.5 15.1 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time .


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