Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
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µ PA2503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µ PA2503, which has a heat spreader, is N-channel applications of notebook computers.
0.65 TYP.
PACKAGE DRAWING (Unit: mm)
MOS Field Effect Transistor designed for power management
FEATURES
spreader. The land size is same as 8-pin TSSOP. • Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A) RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 8.0 A) • Low Ciss: 1200 pF TYP. (VDS = 10.0 V, VGS = 0 V)
+0.05
0.25 −0.05
0.10 M
• µ PA2503 has a thin surface mount package with a heat
+0.1
1 2 3 4
5.8 ±0.1 6.4 ±0.1
8 7 6 5
3.15 ±0.15
3 ±0.1 0.17 ±0.05 0.8 MAX.
0.10 S
ORDERING INFORMATION
PART NUMBER PACKAGE 8PIN HWSON
0 −0
µ PA2503TM
0.75 ±0.15
2.2 ±0.2
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
4.15 ±0.2
0.85 ±0.15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30.0 ±20.0 ±16.0 ±64.0 2.7 150 −55 to +150 16.0 25.6
V V A A W °C °C A mJ
Gate Protection Diode Source Gate
Drain Current (pulse)
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation Channel Temperature Storage Temperature
Single Avalanche Current
Note3
IAS EAS
Body Diode
Single Avalanche Energy Note3
2 Notes 1. Mounted on FR-4 board of 25 cm x 1.6 mm, PW ≤ 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20.0 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16682EJ1V0DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan
2003
µ PA2503
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS www.DataSheet4U.com Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 30.0 V, VGS = 0 V VGS = ±18.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 8.0 A VGS = 10.0 V, ID = 8.0 A VGS = 4.5 V, ID = 8.0 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 15.0 V, ID = 8.0 A VGS = 10.0 V RG = 10 Ω
MIN.
TYP.
MAX. 1.0 ±10.0
UNIT
µA µA
V S
1.5 5 7.5 11.0 1200 320 190 12 17 52 15
2.5
Drain to Source On-state Resistance
9.5 15.1
mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time .