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BU810 Datasheet, Equivalent, Power Transistor.Silicon NPN Darlington Power Transistor Silicon NPN Darlington Power Transistor |
| Part | BU810 |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Feature | INCHANGE Semiconductor
www. DataSheet4U. c om isc Product Specification isc Sili con NPN Darlington Power Transistor BU 810 DESCRIPTION ·Collector-Emitter Su staining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS · Designed for use in high frequency and efficency converters, switching regulat ors and motor control. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL VCBO VCEO VE BO IC ICM IB B PARAMETER Collector-Bas e Voltage Collector-Emitter Voltage Emi tter-Base Voltage Collector Current-Con tinuous Collector Current-Peak Base Cur rent Collector Power Dissipation @ TC=2 5℃ Junction Tempera . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | BU810 |
|---|---|
| Description | Silicon NPN Darlington Power Transistor |
| Feature | INCHANGE Semiconductor
www. DataSheet4U. c om isc Product Specification isc Sili con NPN Darlington Power Transistor BU 810 DESCRIPTION ·Collector-Emitter Su staining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS · Designed for use in high frequency and efficency converters, switching regulat ors and motor control. ABSOLUTE MAXIMU M RATINGS(Ta=25℃) SYMBOL VCBO VCEO VE BO IC ICM IB B PARAMETER Collector-Bas e Voltage Collector-Emitter Voltage Emi tter-Base Voltage Collector Current-Con tinuous Collector Current-Peak Base Cur rent Collector Power Dissipation @ TC=2 5℃ Junction Tempera . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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