BU810

INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 600 400 5 7 10 2 75 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.66 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU810 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA B 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 2.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 3 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 20mA B 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4...