TT2274T

Ordering number : ENA1139 TT2274T www.DataSheet4U.com SANYO Semiconductors DATA SHEET TT2274T Features NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage (VCBO≥1400V). Ultrahigh-speed switching. Wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW≤300μs, duty cycle≤10% Tc=25°C Conditions Ratings 1400 800 5 1 2 1 25 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO ICES IEBO hFE1 hFE2 Conditions VCB=800V, IE=0A VCB=1400V, RBE=0Ω VEB=4V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A 15 4 Ratings min typ max 10 1 1 35 Unit μA mA mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, trans...