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2ST2121 Datasheet, Equivalent, bipolar transistor.High power PNP epitaxial planar bipolar transistor High power PNP epitaxial planar bipolar transistor |
| Part | 2ST2121 |
|---|---|
| Description | High power PNP epitaxial planar bipolar transistor |
| Feature | www. DataSheet4U. com 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast sw itching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier D escription The device is a PNP transist or manufactured using new BiT-LA (Bipol ar transistor for linear amplifier) tec hnology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2ST2121 Packag e TO-3 Packaging tray Ord . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | 2ST2121 |
|---|---|
| Description | High power PNP epitaxial planar bipolar transistor |
| Feature | www. DataSheet4U. com 2ST2121 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast sw itching speed Typical ft = 25 MHz Fully characterized at 125 oC Applications ■ 1 2 TO-3 Audio power amplifier D escription The device is a PNP transist or manufactured using new BiT-LA (Bipol ar transistor for linear amplifier) tec hnology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2ST2121 Packag e TO-3 Packaging tray Ord . |
| Manufacture | STMicroelectronics |
| Datasheet |
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