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2SC5296 Datasheet, Equivalent, Power Transistors.

Silicon NPN Power Transistors

Silicon NPN Power Transistors

 

 

 

Part 2SC5296
Description Silicon NPN Power Transistors
Feature isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for ul trahigh-definition CRT display horizont al deflection output applicaitions ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect or-Base Voltage 1500 V VCEO Collect or-Emitter Voltage 800 V VEBO Emitt er-Base Voltage 6 V IC Collector Cu rrent- Continuous 8 A ICP Collector Current-Pulse Collec .
Manufacture Inchange Semiconductor
Datasheet
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Part 2SC5296
Description Silicon NPN Power Transistors
Feature isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for ul trahigh-definition CRT display horizont al deflection output applicaitions ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect or-Base Voltage 1500 V VCEO Collect or-Emitter Voltage 800 V VEBO Emitt er-Base Voltage 6 V IC Collector Cu rrent- Continuous 8 A ICP Collector Current-Pulse Collec .
Manufacture Inchange Semiconductor
Datasheet
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2SC5296

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2SC5296

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