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2SC5296 Datasheet, Equivalent, Power Transistors.Silicon NPN Power Transistors Silicon NPN Power Transistors |
Part | 2SC5296 |
---|---|
Description | Silicon NPN Power Transistors |
Feature | isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for ul trahigh-definition CRT display horizont al deflection output applicaitions ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect or-Base Voltage 1500 V VCEO Collect or-Emitter Voltage 800 V VEBO Emitt er-Base Voltage 6 V IC Collector Cu rrent- Continuous 8 A ICP Collector Current-Pulse Collec . |
Manufacture | Inchange Semiconductor |
Datasheet |
Part | 2SC5296 |
---|---|
Description | Silicon NPN Power Transistors |
Feature | isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for ul trahigh-definition CRT display horizont al deflection output applicaitions ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect or-Base Voltage 1500 V VCEO Collect or-Emitter Voltage 800 V VEBO Emitt er-Base Voltage 6 V IC Collector Cu rrent- Continuous 8 A ICP Collector Current-Pulse Collec . |
Manufacture | Inchange Semiconductor |
Datasheet |
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