Power Transistors
2SD2573
www.DataSheet4U.com Silicon NPN triple diffusion planar type
For high current amplification,...
Power
Transistors
2SD2573
www.DataSheet4U.com Silicon
NPN triple diffusion planar type
For high current amplification, power amplification
7.5±0.2
Unit: mm
4.5±0.2
16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation TC = 25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 80 60 6 3 6 1.5 150 −55 to +150 Unit V V V A A W °C °C
2.5±0.1
Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping
10.8±0.2
0.65±0.1
0.85±0.1 1.0±0.1 0.8 C
90˚
■ Features
3.8±0.2
0.8 C
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
0.5±0.1 0.8 C 1 2 3 2.05±0.2
0.4±0.1
2.5±0.2
2.5±0.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO hFE VCE(sat) fT Conditions IC = 25 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A IC = 2 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 500 Min 60 100 100 100 2 500 1.0 Typ Max Unit V µA µA µA V MHz
Note) 1. Measuring me...