2SJ77

www.DataSheet4U.com 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 5 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) 2SJ76 2SJ77 2SJ78 2SJ79 Symbol VDSX Value –140 –160 –180 VGSS ID IDR Pch Note 1 Pch Tch Tstg –200 ±15 –500 –500 1.75 30 150 –45 to +150 V mA mA W W °C °C Unit V Item Drain to source voltage Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ76 2SJ77 2SJ78 V (BR) GSS VGS (on) VDS (sat) |yfs| Ciss Crss Symbol V (BR) DSX Min –140 –160 –180 –200 ±15 –0.2 — 20 — — Typ — — — — — — — 35 120 4.8 Max — — — — — –1.5 –2.0 — — — Unit V V V V V V V mS pF pF IG = ±10 µA, VDS = 0 ID = –10 mA, VDS = –10 V Note 2 ID = –10 mA, VGS = 0 ID = –10 mA, VDS = –20 V VDS = –10 V, ID = –10 mA, f = 1 MHz Note 2 Test Conditions VGS = 2 V, ID = –1 mA 2SJ79 Gate to so...