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2SJ79 Dataheets PDF



Part Number 2SJ79
Manufacturers Renesas Technology
Logo Renesas Technology
Description (2SJ76 - 2SJ79) Silicon P-Channel MOS FET
Datasheet 2SJ79 Datasheet2SJ79 Datasheet (PDF)

www.DataSheet4U.com 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source.

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www.DataSheet4U.com 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev.2.00 Sep 07, 2005 Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 5 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) 2SJ76 2SJ77 2SJ78 2SJ79 Symbol VDSX Value –140 –160 –180 VGSS ID IDR Pch Note 1 Pch Tch Tstg –200 ±15 –500 –500 1.75 30 150 –45 to +150 V mA mA W W °C °C Unit V Item Drain to source voltage Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ76 2SJ77 2SJ78 V (BR) GSS VGS (on) VDS (sat) |yfs| Ciss Crss Symbol V (BR) DSX Min –140 –160 –180 –200 ±15 –0.2 — 20 — — Typ — — — — — — — 35 120 4.8 Max — — — — — –1.5 –2.0 — — — Unit V V V V V V V mS pF pF IG = ±10 µA, VDS = 0 ID = –10 mA, VDS = –10 V Note 2 ID = –10 mA, VGS = 0 ID = –10 mA, VDS = –20 V VDS = –10 V, ID = –10 mA, f = 1 MHz Note 2 Test Conditions VGS = 2 V, ID = –1 mA 2SJ79 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 2. Pulse test Note 2 Rev.2.00 Sep 07, 2005 page 2 of 5 2SJ76, 2SJ77, 2SJ78, 2SJ79 Main Characteristics www.DataSheet4U.com Power vs. Temperature Derating 60 –500 Typical Output Characteristics Tc = 25°C –4.5 –4.0 –400 –3.5 –300 –3.0 –2.5 –200 –2.0 –100 VGS = –0.5 V Pch (W) 40 Channel Dissipation 20 Drain Current ID (mA) –1.5 –1.0 –20 0 0 50 100 150 0 0 –4 –8 –12 –16 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics –50 Tc = 25°C –1.0 –0.9 –500 Typical Transfer Characteristics VDS = –20 V ID (mA) ID (mA) –40 –0.8 –0.7 –0.6 –400 –30 –300 Drain Current Drain Current Tc = –25°C 25°C 75°C –20 –200 –0.5 –0.4 VGS = –0.1 V –10 –0.2 –0.3 –100 0 0 –20 –40 –60 –80 –100 0 0 –1 –2 –3 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Typical Transfer Characteristics Forward Transfer Admittance |yfs| (mS) –100 VDS = –20 V 200 100 50 Forward Transfer Admittance vs. Drain Current ID (mA) –80 –60 Drain Current Tc = –25°C 25°C 75°C 20 10 5 Tc = 25°C VDS = –20 V –5 –10 –20 –50 –100 –200 –40 –20 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 2 –2 Gate to Source Voltage VGS (V) Drain Current ID (mA) Rev.2.00 Sep 07, 2005 page 3 of 5 2SJ76, 2SJ77, 2SJ78, 2SJ79 Forward Transfer Admittance vs. Frequency www.DataSheet4U.com Forward Transfer Admittance |yfs| (mS) 500 100 10 1 Tc = 25°C VDS = –20 V ID = –10 mA 100 k 1M 10 M 50 M 0.1 0.05 5 k10 k Frequency f (Hz) Rev.2.00 Sep 07, 2005 page 4 of 5 2SJ76, 2SJ77, 2SJ78, 2SJ79 Package Dimensions www.DataSheet4U.com SC-46 JEITA Package Code RENESAS Code PRSS0004AC-A Package Name TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.2 –0.1 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SJ76-E 2SJ77-E 2SJ78-E 2SJ79-E 500 pcs 500 pcs 500 pcs 500 pcs Quantity Box (Sack) Box (Sack) Box (Sack) Box (Sack) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 www.DataSheet4U.com Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technolo.


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