EKV550

50V N-ch MOSFET EKV550 January. 2006 ■Features Low on-resistance Avalanche energy capability guaranteed Built-in Gate protection diode against electrostatic discharge (ESD) ■Package—TO-220 ■Applications DC-DC Converters High speed switching Designs ■Equivalent circuit ew D (2) r N G (1) ed fo S (3) d Absolute maximum ratings men Parameter m Drain to Source Voltage co Gate to Source Voltage e Continuous Drain Current R Pulsed Drain Current NotMaximum Power Dissipation Symbol VDSS VGSS ID ID(pulse) 1) PD Rating 50 ±20 ±50A ±150A 85 (Tc=25°C) (Ta=25°C） Unit V V A A W Single Pulse Avalanche Energy EAS 2) 150 mJ Avalanche Current IAS 20 A Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to 150 °C 1) PW≤100μs, duty cycle≤1% 2) VDD=20V,L=72μH, ILp=50A, unclamped, RG=50Ω. See Fig.1 . Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-005JA-060111 50V N-ch MOSFET EKV550 January. 2006 Parameter Electrical characteristics Symbol Test Conditions MIN. Limits TYP. (Ta=25°C） Unit MAX. Drain to Source breakdown Voltage V(BR)DSS ID=100μA,VGS=0V 250 V Gate to Source Leakage Current Drain to Source Leakage Current Gate Threshold Voltage IGSS IDSS VTH VGS=±20V VDS=50V, VGS=0V VDS=10V, ID=250μA 3.0 ±10 μA igns100 μA Des 4.2 V Forward Transconductance Re(Yfs) VDS=10V, ID=25A 17 ew Static Drain to Source On-Resistance RDS(on) ID=25A, VGS=10V N Input Capacitance for Output Capacitance d Reverse Transfer Capa...