SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC1942
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC1942
DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 3 50 150 -65~150 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IE=1mA ; IC=0 IC=2.5A; IB=0.8A IC=2.5A; IB=0.8A VCB=600V; IE=0 VEB=5V; IC=0 IC=1 A ; VCE=5V 8 MIN 800 6
2SC1942
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V
5.0 1.5 10 10 40
V V µA µA
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
PACKA...