2SC2258

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION ·With TO-126 package ·High transition frequency fT ·High collector-emitter voltage VCEO APPLICATIONS ·For high breakdown voltage general amplification ·For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 250 250 7 0.1 0.15 1.2* PC Collector power dissipation TC=25 4* Tj Tstg Junction temperature Storage temperature 2 1 UNIT V V V A A W 150 -55 +150 Note :*1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC2258 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector cutoff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100k= IE=0.1mA ;IC=0 IC=50mA ;IB=5m A IC=40mA ; VCE=20V IC=40mA ; VCE=20V IC=5mA ; VCE=50V IE=0; VCB=50V;f=1MHz IE=-10mA ; VCB=10V,f=200MHz 40 30 3 100 4.5 pF MHz 7 1.2 1.2 MIN TYP. MAX 100 UNIT µA V V V SYMBOL ICER V(BR)EBO VCEsat VBE hFE-1 hFE-2 COB fT 2 SavantIC Semiconducto...