SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2270
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC2270
DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IE IEM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Emitter current (DC) Emitter current-peak Ta=25 PC Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 50 20 8 5 8 -5 -8 1.0 W UNIT V V V A A A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=4A; IB=0.1A IC=4A ; VCE=2V VCB=40V; IE=0 VEB=8V; IC=0 IC=0.5A ; VCE=2V IC=4A ; VCE=2V IC=0.5A ; VCE=2V IE=0;f=1MHz ; VCB=10V 140 70 MIN 20 8 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
2SC2270
TYP.
MAX
UNIT V V
1.0...