POWER TRANSISTOR. 2SC2275A Datasheet

2SC2275A TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2275A
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2275A Datasheet



2SC2275A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SA985/985A
·High breakdown voltage
APPLICATIONS
·For low frequency and high frequency
power amplifer applicatons
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2275 2SC2275A
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SC2275
2SC2275A
Open emitter
VCEO
Collector-emitter voltage
2SC2275
2SC2275A
Open base
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
120
150
120
150
5
1.5
3.0
0.3
25
150
-55~150
UNIT
V
V
V
A
A
A
W



2SC2275A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SC2275 2SC2275A
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
2SC2275
2SC2275A
IC=25mA ,IB=0
120
150
V
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
2.0 V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.5 V
ICBO Collector cut-off current
VCB=120V; IE=0
1.0 µA
IEBO Emitter cut-off current
VEB=3V; IC=0
1.0 µA
hFE-1
DC current gain
IC=5mA ; VCE=5V
35
hFE-2
DC current gain
COB Output capacitance
IC=0.3A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
60 150 320
19 pF
fT Transition frequency
IC=0.2A ; VCE=5V
200 MHz
hFE-2 Classifications
RQ
P
60-120 100-200 160-320
2





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