POWER TRANSISTOR. 2SC2292 Datasheet

2SC2292 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2292
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2292 Datasheet



2SC2292
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2292
DESCRIPTION
·With TO-3 package
·High speed ,high voltage
APPLICATIONS
·For high speed ,high voltage switching
and DC-DC converter application
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
PT
Tj
Tstg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tmb.25
VALUE
500
400
7
8
80
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
1.25
UNIT
/W



2SC2292
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
ICBO Collector cut-off current
IC=4A; IB=0.8A
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=4A ; VCE=2V
Product Specification
2SC2292
MIN TYP. MAX UNIT
400 V
500 V
7V
0.8 V
1.5 V
0.1 mA
0.1 mA
15
2





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