POWER TRANSISTOR. 2SC2305 Datasheet

2SC2305 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2305
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2305 Datasheet



2SC2305
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide safe operating area
APPLICATIONS
·For switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2305
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-peak
IB Base current (DC)
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
400
400
8
7
14
3
80
150
-55~150
UNIT
V
V
V
A
A
A
W



2SC2305
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=1m A; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1m A; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
hFE-2
DC current gain
DC current gain
IC=0.8A ; VCE=5V
IC=4A ; VCE=5V
Product Specification
2SC2305
MIN TYP. MAX UNIT
400 V
400 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
10
2





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