POWER TRANSISTOR. 2SC2331 Datasheet

2SC2331 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2331
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2331 Datasheet



2SC2331
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1008
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2331
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
100
100
7
2.0
4.0
1.0
1.5
15
150
-55~150
UNIT
V
V
V
A
A
A
W



2SC2331
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2331
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
Switching times resistive load
100
40
40
V
0.6 V
1.5 V
10 µA
10 µA
200
ton Turn-on time
ts Storage time
tf Fall time
IC=1.0A IB1=- IB2=0.1A
RL=50A;VCCB50V
0.5 µs
1.5 µs
0.5 µs
hFE-2 Classifications
ML K
40-80 60-120 100-200
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)