POWER TRANSISTOR. 2SC2335 Datasheet

2SC2335 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2335
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2335 Datasheet



2SC2335
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0µs(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2335
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
500
400
7
7
15
3.5
40
150
-50~150
UNIT
V
V
V
A
A
A
W
MAX
3.125
UNIT
/W



2SC2335
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2335
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCB=400V ;IE=0
VCE=400V ;VBE(off)=-1.5V
TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1.0A ; VCE=5V
hFE-3
DC current gain
IC=3.0A ; VCE=5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VCC=150V;IC=3.0A;
IB1=-IB2=600mA;
RL=50E
MIN TYP. MAX UNIT
400 V
1.0 V
1.2 V
10 µA
10 µA
5.0 mA
10 µA
20 80
20 80
10
1.0 µs
2.5 µs
1.0 µs
hFE-2 Classifications
ML K
20-40 30-60 40-80
2





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