POWER TRANSISTOR. 2SC2335F Datasheet

2SC2335F TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2335F
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2335F Datasheet



2SC2335F
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220F package
·Collector-emitter sustaining voltage
VCEO(sus)=400V(Min)
·Collector-emitter saturation voltage
VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
·Switching time-tf=1.0µs(Max.)@IC=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SC2335F
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PD
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
7
15
3.5
40
150
-50~150
UNIT
V
V
V
A
A
A
W



2SC2335F
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2335F
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(SUS)CEO Collector-emitter sustaining voltage IC=3.0A ; IB1=0.6A,L=1mH
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
ICEX Collector cut-off current
IEBO Emitter cut-off current
VCB=400V ;IE=0
VCE=400V ;VBE(off)=-1.5V
TC=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1.0A ; VCE=5V
hFE-3
DC current gain
IC=3.0A ; VCE=5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VCC=150V;IC=3.0A;
IB1=-IB2=600mA;
RL=50D
MIN TYP. MAX UNIT
400 V
1.0 V
1.2 V
10 µA
10 µA
1.0 mA
10 µA
20
20 80
10
1.0 µs
2.5 µs
1.0 µs
hFE-2 Classifications
ROY
20-40 30-60 40-80
2





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