SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2497 2SC2497A
DESC...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC2497 2SC2497A
DESCRIPTION ·With TO-126 package ·Complement to type 2SA1096/A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency power amplification
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base voltage 2SC2497 VCEO Collector- emitter voltage 2SC2497A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector Open base 60 5 1.5 3 1.2* PD Total power dissipation TC=25 5* Tj Tstg Junction temperature Storage temperature
2 1
CONDITIONS Open emitter
VALUE
UNIT V
70
50
V
V A A
W
150 -55 +150
Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SC2497 IC=2mA ; IB=0 2SC2497A IC=1mA ;IE=0 IC=1.5A ;IB=0.15A IC=1.5A ;IB=0.15A VCE=10V; IB=0 VCB=20V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=20V,f=1MHz CONDITIONS SYMBOL
2SC2497 2SC2497A
MIN 50
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 60 70 1.0 1.5 100 1 10 80 35 150 220 pF MHz V V V µA µA µA
V(BR)CBO VCEsat VBEsat ICEO ICBO IEBO hFE COB fT
Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector...