Power Transistor. 20N60S5 Datasheet

20N60S5 Transistor. Datasheet pdf. Equivalent

Part 20N60S5
Description Power Transistor
Feature Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(.
Manufacture Infineon Technologies
Total Page 11 Pages
Datasheet
Download 20N60S5 Datasheet



20N60S5
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP20N60S5
VDS
RDS(on)
ID
600
0.19
20
V
A
PG-TO220
2
P-TO220-3-1
123
Type
SPP20N60S5
Package
PG-TO220
Ordering Code
Q67040-S4751
Marking
20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
20
13
40
690
1
20
±20
±30
208
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.8
Page 1
2009-12-01



20N60S5
SPP20N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
Value
20
Unit
V/ns
Symbol
RthJC
RthJA
Tsold
min.
-
Values
typ. max.
- 0.6
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=20A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
ID=1000µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
3.5
-
-
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
VGS=20V, VDS=0V
VGS=10V, ID=13A,
Tj=25°C
Tj=150°C
f=1MHz, open Drain
-
-
-
-
Values
typ. max.
--
700 -
4.5 5.5
0.5 5
- 250
- 100
0.16
0.43
12
0.19
-
-
Unit
V
µA
nA
Rev. 2.8
Page 2
2009-12-01





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