POWER TRANSISTOR. 2SC2562 Datasheet

2SC2562 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2562
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2562 Datasheet



2SC2562
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Complement to type 2SA1012
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2562
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
50
5
5
1
25
150
-55~150
UNIT
V
V
V
A
A
W



2SC2562
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Base-emitter breakdown voltage
IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.15A
ICBO Collector cut-off current
VCB=50V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE –1
DC current gain
IC=1A ; VCE=1V
hFE -2
DC current gain
IC=3A ; VCE=1V
fT Transition frequency
IC=1A ; VCE=4V
Cob Output capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=3A ;IB1=- IB2=0.15A
RL=10B,VCC=30V
hFE-1 Classifications
OY
70-140
120-240
Product Specification
2SC2562
MIN TYP. MAX UNIT
50 V
0.4 V
1.2 V
1 µA
1 µA
70 240
30
120 MHz
80 pF
0.1 µs
1.0 µs
0.1 µs
2





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