POWER TRANSISTOR. 2SC2565 Datasheet

2SC2565 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2565
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2565 Datasheet



2SC2565
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1095
·High transition frequency
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC2565
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collectorl power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
160
160
5
15
1.5
150
150
-55~150
UNIT
V
V
V
A
A
W



2SC2565
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2565
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A
VBE Base-emitter on voltage
IC=5A ; VCE=5V
ICBO Collector cut-off current
VCB=160V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
160 V
5V
2.0 V
2.0 V
50 µA
50 µA
55 240
40
80 MHz
200 pF
hFE-1 classifications
ROY
55-110 80-160 120-240
2





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