POWER TRANSISTOR. 2SC2580 Datasheet

2SC2580 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2580
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2580 Datasheet



2SC2580
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1105
·High power dissipation
·High current capability
APPLICATIONS
·Audio power amplifier
·DC-DC converter
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2580
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
180
120
6
9
90
150
-55~150
UNIT
V
V
V
A
W



2SC2580
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO Collector cut-off current
VCB=180V; IE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=3A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC2580
MIN TYP. MAX UNIT
120 V
180 V
6V
2.5 V
100 µA
100 µA
50
20 MHz
2





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