POWER TRANSISTOR. 2SC2582 Datasheet

2SC2582 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2582
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Total Page 3 Pages
Datasheet
Download 2SC2582 Datasheet



2SC2582
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Large collector power dissipation
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1 Emitter
2
Collector;connected to
mounting base
3 Base
Product Specification
2SC2582
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector- emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open collector
Ta=25
TC=25
VALUE
45
35
5
1
1.5
1.2
10
150
-55 +150
UNIT
V
V
V
A
A
W



2SC2582
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA
ICEO Collector cut-off current
VCE=20V; IB=0
ICBO Collector cut-off current
VCB=20V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=500mA ; VCE=10V
hFE-2
DC current gain
IC=1A ; VCE=5V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IC=50mA ; VCE=10V
Product Specification
2SC2582
MIN TYP. MAX UNIT
35 V
45 V
0.5 V
100 µA
0.1 µA
10 µA
85 340
50
20 pF
200 MHz
hFE-1 Classifications
QRS
85-170 120-240 170-340
2





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