N-Channel MOSFET. AO4800B Datasheet

AO4800B MOSFET. Datasheet pdf. Equivalent

Part AO4800B
Description 30V Dual N-Channel MOSFET
Feature AO4800B 30V Dual N-Channel MOSFET General Description The AO4800B uses advanced trench technology t.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4800B Datasheet



AO4800B
AO4800B
30V Dual N-Channel MOSFET
General Description
The AO4800B uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
100% UIS Tested
100% Rg Tested
30V
6.9A
< 27m
< 32m
< 50m
Top View
SOIC-8
Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1 G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
6.9
5.8
30
14
10
2
1.3
-55 to 150
D1
G2
S1
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Dec 2011
www.aosmd.com
Page 1 of 6



AO4800B
AO4800B
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±12V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
0.7 1.1 1.5
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6.9A
VGS=4.5V, ID=6A
TJ=125°C
17.8 27
28 40
19 32
m
m
VGS=2.5V, ID=5A
24 50 m
gFS Forward Transconductance
VDS=5V, ID=5A
33 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
630
75
50
1.5 3 4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
6 7 nC
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=6.9A
1.3 nC
Qgd Gate Drain Charge
1.8 nC
tD(on)
Turn-On DelayTime
3 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.2, 2.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
25 ns
tf Turn-Off Fall Time
4 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs
8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs
2.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Dec 2011
www.aosmd.com
Page 2 of 6





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