RMWB33001

RMWB33001 www.DataSheet4U.com June 2004 RMWB33001 33 GHz Buffer Amplifier MMIC General Description The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB33001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. Features 4 mil Substrate Small-signal Gain 24dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 3.2mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 173 +8 -30 to +85 -55 to +125 130 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWB33001 Rev. C RMWB33001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current Idq = 112mA Min 32 20 17 Typ -0.2 24 2.0 19 120 15 12 12 1.0 Max 35 Units GHz V dB dB dBm mA % dB dB V Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal (Pin = -15dBm) Gain Variation vs. Frequenc...