RMWL05001

RMWL05001 5 GHz Low Noise Amplifier MMIC www.DataSheet4U.com PRODUCT INFORMATION Description The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWL05001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. Single positive supply operation 4 mil substrate Noise figure 1.4 dB (typ.) Small-signal gain 18 dB (typ.) 1dB compressed Pout 14 dBm (typ.) Chip size 2.0 mm x 1.15 mm Features Absolute Maximum Ratings Parameter Positive DC voltage (+4 V Typical) Positive DC current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd ID PIN TC Tstg RJC Value +6 113 +8 -30 to +85 -55 to +125 112 Units Volts mA dBm °C °C °C /W Electrical Characteristics (At 25°C), 50 Ω system, Vd=+4 V Single Bias Supply Parameter Min Typ Max 5.2 2.3 20 Unit GHz dB dB dB dB dBm Parameter Drain Current at Pin=-20 dBm Input Return Loss (Pin=-15 dBm) Output Return Loss (Pin=-15 dBm) Min Typ Max Unit 50 15 15 mA dB dB Frequency Range 4.7 Noise Figure Gain Small Signal at Pin=-20 dBm 14 Gain Variation vs. Frequency Gain at 1dB Compres...