RMWL26001

RMWL26001 www.DataSheet4U.com June 2004 RMWL26001 21–26.5 GHz Low Noise Amplifier MMIC General Description The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 26 GHz transmit/receive chipset. The RMWL26001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. Features 4 mil substrate Small-signal gain 21dB (typ.) 2.9dB noise figure (typ.) Chip size 3.0mm x 1.25mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg Rjc Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 100 +8 -30 to +85 -55 to +125 170 Units V V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWL26001 Rev. D RMWL26001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50 Ω system, Vd = +4V, Quiescent current (Idg) = 65 mA Min 21 20 20 Typ 0.5 22 21 2.8 20 10 65 80 12 12 2.9 22 Max 26.5 26 26 Units GHz V dB dB dB dB dBm mA mA dB dB dB dBm Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain at Pin = -15dBm (21–24GHz) Gain at Pin = -15dBm ...