23 GHZ Power Amp
RMWP23001
www.DataSheet4U.com
June 2004
RMWP23001
21–24 GHz Power Amplifier MMIC
General Description
The RMWP23001 is...
Description
RMWP23001
www.DataSheet4U.com
June 2004
RMWP23001
21–24 GHz Power Amplifier MMIC
General Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
4mil substrate Small-signal gain 22.5dB (typ.) 1dB compressed Pout 23.5dBm (typ.) Chip size 2.6mm x 1.2mm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 607 +8 -30 to +85 -55 to +125 36.5 Units V V V mA dBm °C °C °C/W
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C
RMWP23001
Electrical www.DataSheet4U.com
Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Currrent Idq = 400mA
Min 21 20 Typ -0.3 22.5 1.0 21.5 24 25 400 430 410 15 14 12 33 8 Max 24 Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -8dBm Gain Variation vs. Fr...
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