RMWP38001

RMWP38001 www.DataSheet4U.com June 2004 RMWP38001 37–40 GHz Power Amplifier MMIC General Description The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWP38001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications. Features 4mil substrate Small-signal gain 22dB (typ.) 1dB compressed Pout 22dBm (typ.) Chip size 3.4mm x 1.4mm Device Absolute Ratings Symbol Vd Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 8 483 +8 -30 to +85 -55 to +125 46 Units V V mA dBm °C °C °C/W ©2004 Fairchild Semiconductor Corporation RMWP38001 Rev. C RMWP38001 Electrical www.DataSheet4U.com Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Currrent Idq = 250mA Min 37 18 Typ -0.5 22 4 21 22 23.5 250 280 270 15 12 7 30 6 0.15 Max 40 Units GHz V dB dB dB dBm dBm mA mA mA % dB dB dBm dB V Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin = -10dBm Gain Variation vs. Frequency Gain at 1dB Compression...