High Speed IGBT
SGW50N60HS
www.DataSheet4U.com
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation • ...
Description
SGW50N60HS
www.DataSheet4U.com
High Speed IGBT in NPT-technology
C
30% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A Eoff25 Tj Marking Package PG-TO-247-3-21
G E
PG-TO-247-3-21
Type SGW50N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C
0.88mJ 150°C G50N60HS Symbol VCE IC
Value 600 100 50
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 50A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
2)
ICpul s EAS
150 150 280 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
±20 ±30 10 416 -55...+150 175 260
V µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between sh...
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