2SC2761 POWER TRANSISTOR Datasheet

2SC2761 Datasheet, PDF, Equivalent


Part Number

2SC2761

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC2761 Datasheet


2SC2761
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC2761
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Open emitter
Open base
Open collector
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
MAX
450
400
7
30
6
200
200
-65~200
UNIT
V
V
V
A
A
W

2SC2761
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1m A ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1m A ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=20A; IB=4A
VBE(sat) Base-emitter saturation voltage
IC=20A; IB=4A
ICBO Collector cut-off current
VCB=450V IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=15A ; VCE=2V
Product Specification
2SC2761
MIN TYP. MAX UNIT
400 V
450 V
7V
1.5 V
1.7 V
100 µA
100 µA
8
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC2761 DESCRIPTION ·With TO-3 package ·High voltage ,hi gh speed APPLICATIONS ·Converters ·In verters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO L VCBO VCEO VEBO IC IB PC Tj Tstg PARAM ETER Collector-base voltage Collector-e mitter voltage Emitter-base voltage Col lector current Base current Collector p ower dissipation Junction temperature S torage temperature TC=25 Open emitter O pen base Open collector CONDITIONS MAX 450 400 7 30 6 200 200 -65~200 UNIT V V V A A W SavantIC Semiconductor www.Da taSheet4U.com Product Specification S ilicon NPN Power Transistors CHARACTERI STICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltag e Emitter-base breakdown voltage Collector-emitter saturation voltage.
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