2SC2791 POWER TRANSISTOR Datasheet

2SC2791 Datasheet, PDF, Equivalent


Part Number

2SC2791

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC2791 Datasheet


2SC2791
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·High speed and high voltage switching
·Switching regulator
·High speed DC-DC converter
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC2791
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
900
800
7
5
3
100
150
-55~150
UNIT
V
V
V
A
A
W

2SC2791
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A
VBE(sat) Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=10mA ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
Switching times
tr Rise time
tstg Storage time
tf Fall time
VCC=400V ,IC=3A,
IB1=0.3A;IB2=-0.8A
Product Specification
2SC2791
MIN TYP. MAX UNIT
800 V
900 V
1.0 V
1.5 V
100 µA
1 mA
10
10
1.0 µs
3.5 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·High collector breakdown v oltage ·Excellent switching times APPL ICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2 ) PIN 1 2 3 Base Emitter DESCRIPTION 2 SC2791 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Ba se current Collector power dissipation Junction temperature Storage temperatur e TC=25 Open emitter Open base Open col lector CONDITIONS VALUE 900 800 7 5 3 1 00 150 -55~150 UNIT V V V A A W Savant IC Semiconductor www.DataSheet4U.com P roduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unle ss otherwise specified PARAMETER CONDIT IONS MIN 2SC2791 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitt.
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