SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 ...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching
regulator ·High speed DC-DC converter PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPTION
2SC2791
Fig.1 simplified outline (TO-3) and symbol Collector
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 5 3 100 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SC2791
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCE(sat) VBE(sat) ICBO
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
Collector cut-off current
VCB=800V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
10
Switching times
tr tstg tf
Rise time VCC=400V ,IC=...