SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC2816
DESCRIPTION ·...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
2SC2816
DESCRIPTION ·With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 5 10 2.5 40 150 -55~150 UNIT V V V A A A W
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ; RBE=9;L=100mH IE=10mA ; IC=0 IC=2.5A; IB=0.5A IC=2.5A; IB=0.5A VCB=400V ;IE=0 VCE=350V ; RBE=9 IC=2.5 A ; VCE=5V IC=5 A ; VCE=5V 15 7 MIN 400 7
2SC2816
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2
TYP.
MAX
UNIT V V
1.0 1.5 50 50
V V µA µA
Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=-IB2=1A VCC=150V 0.5 1.5 0.5 µs µs µs
2
...