2SD974 Epitaxial Transistor Datasheet

2SD974 Datasheet, PDF, Equivalent


Part Number

2SD974

Description

Silicon NPN Epitaxial Transistor

Manufacture

Renesas Technology

Total Page 6 Pages
Datasheet
Download 2SD974 Datasheet


2SD974
2SD974
www.DataSheet4U.com
Silicon NPN Epitaxial
Application
Power switching
TV horizontal deflection output
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
REJ03G0774-0300
Rev.3.00
Oct 06, 2006
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Surge collector current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
IC(surge)
PC
Tj
Tstg
Ratings
120
60
5
1
1.5
4
0.9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Rev.3.00 Oct 06, 2006 page 1 of 5

2SD974
2SD974
Electrical Characteristics
www.DataSheet4U.com
Item
Symbol Min Typ Max Unit
(Ta = 25°C)
Test conditions
Collector to base breakdown voltage
V(BR)CBO
120
V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage V(BR)CEO
60
V IC = 1 mA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
5
——
V IE = 10 µA, IC = 0
Collector cutoff current
ICBO — — 1.0 µA VCB = 100 V, IE = 0
DC current transfer ratio
hFE
150 —
VCE = 5 V, IC = 1 A*1
Collector to emitter saturation voltage
VCE(sat)
— 0.3
V IC = 1 A, IB = 0.05 A*1
Base to emitter saturation voltage
Fall time
VBE(sat)
— 1.2
V
tf — 0.4 — pF ICP = 1 A, IB1 = –IB2 = 50 mA*1
Note: 1. Pulse test
Rev.3.00 Oct 06, 2006 page 2 of 5


Features www.DataSheet4U.com 2SD974 Silicon NPN Epitaxial REJ03G0774-0300 Rev.3.00 Oct 06, 2006 Application • Power switchi ng • TV horizontal deflection output Outline RENESAS Package code: PRSS0003 DC-A (Package name: TO-92 Mod) 1. Emitt er 2. Collector 3. Base 3 2 1 Absolut e Maximum Ratings (Ta = 25°C) Item Col lector to base voltage Collector to emi tter voltage Emitter to base voltage Co llector current Collector peak current Surge collector current Collector power dissipation Junction temperature Stora ge temperature Symbol VCBO VCEO VEBO IC iC(peak) IC(surge) PC Tj Tstg Ratings 120 60 5 1 1.5 4 0.9 150 –55 to +150 Unit V V V A A A W °C °C Rev.3.00 Oc t 06, 2006 page 1 of 5 2SD974 Electri cal Characteristics www.DataSheet4U.com (Ta = 25°C) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) tf Min 120 60 5 — 150 — — — Typ — — — — — — 0.4 Max — — — 1.0 — 0.3 1.2 — Unit V V V µA V V pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VC.
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