2SC2979 power Transistor Datasheet

2SC2979 Datasheet, PDF, Equivalent


Part Number

2SC2979

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC2979 Datasheet


2SC2979
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High VCBO
·Fast switching speed.
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2979
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
PC
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
900
800
7
3
6
1.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC2979
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2979
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; RBE=<,L=100mH
800
V
V(BR)EBO Base-emitter breakdown voltage
IE=10mA ; IC=0
7V
VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A
1.0 V
VBEsat
Base-emitter saturation voltage
IC=0.75A; IB=0.15A
1.5 V
ICBO Collector cut-off current
VCB=750V ;IE=0
100 µA
ICEO Collector cut-off current
VCE=650V; RBE=<
100 µA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
15
hFE-2
DC current gain
IC=1.5A ; VCE=5V
7
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VCCA250V; IC=1.5A
IB1=0.3A;IB2=-0.75A
1.0 µs
3.0 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC2979 DESCRIPTION ·With TO-220C package ·High VCBO ·F ast switching speed. APPLICATIONS ·For high voltage ,high speed and high powe r switching applications PINNING PIN 1 2 3 Base Collector;connected to mountin g base Emitter DESCRIPTION Absolute ma ximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Col lector-base voltage Collector-emitter v oltage Emitter-base voltage Collector c urrent Collector current-peak Base curr ent Collector dissipation Junction temp erature Storage temperature TC=25 CONDI TIONS Open emitter Open base Open colle ctor VALUE 900 800 7 3 6 1.5 40 150 -55 ~150 UNIT V V V A A A W SavantIC Semic onductor www.DataSheet4U.com Product S pecification Silicon NPN Power Transis tors CHARACTERISTICS Tj=25 unless other wise specified PARAMETER Collector-emit ter sustaining voltage Base-emitter bre akdown voltage Collector-emitter saturation voltage Base-emitter sa.
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