2SC3040 power Transistor Datasheet

2SC3040 Datasheet, PDF, Equivalent


Part Number

2SC3040

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3040 Datasheet


2SC3040
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO 500V)
·Fast switching speed
·Wide ASO Safe Operating Area
APPLICATIONS
·400V/8A switching regulator applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3040
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
500
400
7
8
16
3
2.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3040
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE==
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO Collector cut-off current
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE -2
DC current gain
IC=4A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=0.8A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=5A IB1=-IB2=1A
RL=40D,VCC=200V
Product Specification
2SC3040
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
80 pF
20 MHz
1.0 µs
2.5 µs
1.0 µs
hFE-1 classifications
LM
N
15-30
20-40
30-50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3040 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 500V) ·Fast switching s peed ·Wide ASO Safe Operating Area APP LICATIONS ·400V/8A switching regulator applications PINNING PIN 1 2 3 Base Co llector;connected to mounting base Emit ter Fig.1 simplified outline (TO-3PN) a nd symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base vol tage Collector-emitter voltage Emitter- base voltage Collector current Collecto r current-peak Base current Ta=25 PC Co llector power dissipation TC=25 Tj Tstg Junction temperature Storage temperatu re 80 150 -55~150 CONDITIONS Open emitt er Open base Open collector VALUE 500 4 00 7 8 16 3 2.5 W UNIT V V V A A A Sav antIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Po wer Transistors CHARACTERISTICS Tj=25 u nless otherwise specified PARAMETER Collector-emitter breakdown volt.
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