K1332

Ordering number:EN3137 N-Channel Junction Silicon FET www.DataSheet4U.com 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Package Dimensions unit:mm 2058 [2SK1332] 0.425 0.2 0 to 0.1 0.6 0.9 0.3 3 2.1 1.250 Features · Ultrasmall-sized package permitting 2SK1332applied sets to be made smaller and slimmer. 0.15 0.425 1 2 0.65 0.65 2.0 0.3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions 1 : Source 2 : Drain 3 : Gate SANYO : MCP Ratings 30 –30 10 20 150 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Zero-Gate Voltage Drain Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)GDS IG=–10µA, VDS=0 IGSS VGS=–20V, VDS=0 IDSS VGS(off) | yfs | VDS=10V, VGS=0V VDS=10V, ID=1µA VDS=10V, VGS=0V, f=1kHz Conditions Ratings min –30 –1.0 0.6* –0.2 2.5 –0.7 5.0 6.0* –2.5 typ max Unit V nA mA V mS * : The 2SK1332 is classified by IDSS as follows (unit : mA) : 0.6 2 1.5 1.2 3 3.0 2.5 4 6.0 Continued on next page. (Note) Marking : V IDSS rank : 2, 3, 4 For CP package version, use the 2SK303. Any and all SANYO products described or...