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IB6N60A Dataheets PDF



Part Number IB6N60A
Manufacturers International Rectifier
Logo International Rectifier
Description IRFIB6N60A
Datasheet IB6N60A DatasheetIB6N60A Datasheet (PDF)

www.DataSheet4U.com PD - 91813 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS† Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l IRFIB6N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK G DS Absolute Maximum Ratings.

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www.DataSheet4U.com PD - 91813 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS† Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l IRFIB6N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 0.75W ID 5.5A TO-220 FULLPAK G DS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.5 3.5 37 60 0.48 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies: l l Single Transistor Forward Active Clamped Forward Notes  through † are on page 8 www.irf.com 1 01/12/99 www.DataSheet4U.com IRFIB6N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA 0.75 W VGS = 10V, ID = 3.3A „ 4.0 V VDS = VGS, ID = 250µA 25 VDS = 600V, VGS = 0V µA 250 VDS = 480V, VGS = 0V, TJ = 150°C 100 V GS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 13 25 30 22 1400 180 7.1 1957 49 96 Max. Units Conditions ––– S VDS = 25V, ID = 5.5A 49 ID = 9.2A 13 nC VDS = 400V 20 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 300V ––– ID = 9.2A ns ––– RG = 9.1 W ––– RD = 35.5W,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 290 9.2 6.0 Units mJ A mJ Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient Typ. ––– ––– Max. 2.1 65 Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 5.5 showing the A G integral reverse ––– ––– 37 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „ ––– 530 800 ns TJ = 25°C, IF = 9.2A ––– 3.0 4.4 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com www.DataSheet4U.com IRFIB6N60A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 4.7V 20µs PULSE WIDTH TJ = 150 °C 1 10 100 0.1 0.1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 9.2A I D , Drain-to-Source Current (A) 2.5 10 TJ = 150 ° C 2.0 1.5 TJ = 25 ° C 1 1.0 0.5 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 www.DataSheet4U.com IRFIB6N60A 2400 2000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = 9.2A 400V VDS = 480V VDS = 300V VDS = 120V 16 C, Capacitance (pF) Ciss 1600 Coss 1200 12 8 800 400 Crss 4 0 1 10 100 1000 A 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THI.


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