(PDF) IB6N60A Datasheet PDF | International Rectifier





IB6N60A Datasheet PDF

Part Number IB6N60A
Description IRFIB6N60A
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download IB6N60A Datasheet PDF

Features: Datasheet pdf www.DataSheet4U.com PD - 91813 SMPS MO SFET Applications l Switch Mode Power S upply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l H igh Voltage Isolation = 2.5KVRMS† Bene fits Low Gate Charge Qg results in Simp le Drive Requirement l Improved Gate, A valanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Av alanche Voltage and Current l IRFIB6N6 0A HEXFET® Power MOSFET VDSS 600V Rd s(on) max 0.75W ID 5.5A TO-220 FULLPA K G DS Absolute Maximum Ratings Param eter ID @ TC = 25°C ID @ TC = 100°C I DM PD @TC = 25°C VGS dv/dt TJ TSTG Con tinuous Drain Current, VGS @ 10V Contin uous Drain Current, VGS @ 10V Pulsed Dr ain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 5.5 3.5 37 60 0.48 ± 30 5.0 -55 to + 1 50 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C .

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IB6N60A datasheet
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PD - 91813
SMPS MOSFET IRFIB6N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
0.75W
5.5A
G DS
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.5
3.5
37
60
0.48
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Single Transistor Forward
l Active Clamped Forward
Notes  through †are on page 8
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01/12/99

IB6N60A datasheet
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IRFIB6N60A
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 ––– ––– V VGS = 0V, ID = 250µA
––– ––– 0.75 W VGS = 10V, ID = 3.3A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs Forward Transconductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
5.5 ––– ––– S VDS = 25V, ID = 5.5A
––– ––– 49
––– ––– 13
––– ––– 20
––– 13 –––
ID = 9.2A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 „
VDD = 300V
––– 25 ––– ns ID = 9.2A
––– 30 –––
RG = 9.1W
––– 22 –––
RD = 35.5W,See Fig. 10 „
––– 1400 –––
VGS = 0V
––– 180 –––
VDS = 25V
––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1957 –––
––– 49 –––
––– 96 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
290
9.2
6.0
Units
mJ
A
mJ
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.1
65
Units
°C/W
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
––– ––– 5.5
––– ––– 37
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „
––– 530 800 ns TJ = 25°C, IF = 9.2A
––– 3.0 4.4 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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