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PD - 91813
SMPS MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
l
IRFIB6N60A
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max
0.75W
ID
5.5A
TO-220 FULLPAK
G DS
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
5.5 3.5 37 60 0.48 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies:
l l
Single Transistor Forward Active Clamped Forward
Notes
through are on page 8
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01/12/99
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IRFIB6N60A
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 600 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA 0.75 W VGS = 10V, ID = 3.3A 4.0 V VDS = VGS, ID = 250µA 25 VDS = 600V, VGS = 0V µA 250 VDS = 480V, VGS = 0V, TJ = 150°C 100 V GS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 5.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 13 25 30 22 1400 180 7.1 1957 49 96 Max. Units Conditions ––– S VDS = 25V, ID = 5.5A 49 ID = 9.2A 13 nC VDS = 400V 20 VGS = 10V, See Fig. 6 and 13 ––– VDD = 300V ––– ID = 9.2A ns ––– RG = 9.1 W ––– RD = 35.5W,See Fig. 10 ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
290 9.2 6.0
Units
mJ A mJ
Thermal Resistance
Parameter
RqJC RqJA Junction-to-Case Junction-to-Ambient
Typ.
––– –––
Max.
2.1 65
Units
°C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 5.5 showing the A G integral reverse ––– ––– 37 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V ––– 530 800 ns TJ = 25°C, IF = 9.2A ––– 3.0 4.4 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFIB6N60A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP
10
1
4.7V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
4.7V
20µs PULSE WIDTH TJ = 150 °C
1 10 100
0.1 0.1
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 9.2A
I D , Drain-to-Source Current (A)
2.5
10
TJ = 150 ° C
2.0
1.5
TJ = 25 ° C
1
1.0
0.5
0.1 4.0
V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFIB6N60A
2400
2000
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 9.2A
400V VDS = 480V VDS = 300V VDS = 120V
16
C, Capacitance (pF)
Ciss
1600
Coss
1200
12
8
800
400
Crss
4
0 1 10 100 1000
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THI.