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AP70L02GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching G S D
BVDSS RDS(ON) ID
25V 9mΩ 66A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70L02GP) is available for low-profile applications. G D G D S
TO-263(S)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
S Rating 25 ±20 66 42 210 66 0.53
TO-220(P)
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.9 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200831073-1/6
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Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.037
Max. Units 9 18 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A VGS=4.5V, ID=20A
25 23 3 17 8.8 95 24 14 790 475 195
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=33A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS=± 20V ID=33A VDS=20V VGS=5V VDS=15V ID=33A RG=3.3Ω,VGS=10V RD=0.45Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.26V
1
Min. -
Typ. -
Max. Units 66 210 1.26 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=66A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/6
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AP70L02GS/P
250
140
T C =25 o C
200
V G =10V V G =8.0V
120
T C =150 o C
V G =10V V G =8.0V V G =6.0V
100
ID , Drain Current (A)
150
ID , Drain Current (A)
80
V G =6.0V
100
V G =5.0V
60
V G =5.0V
50
40
V G =4.0V
V G =4.0V
20
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
23
1.8
21
I D =10A T c =25 ℃
I D =10A
1.6
V G =10V
19
15
Normalized R DS(ON)
17
1.4
RDS(ON) (mΩ)
1.2
13
11
1
9 0.8 7
5 2 3 4 5 6 7 8 9 10 11
0.6 -50 0 50 100 150
V GS (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
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AP70L02GS/P
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80
80
70
70
60
60
ID , Drain Current (A)
50
50
PD (W)
25 50 75 100 125 150
40
40
30
30
20
20
10
10
0
0 0 50 100 150
T c , Case Temperature ( C)
o
T c ,Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
100
Normalized Thermal Response (R thjc)
0.2
10us ID (A)
0.1 0.05 0.02 0.01 SINGLE PULSE
0.1
100us
10
PDM
t T
Duty factor = t/T Peak Tj = P DM x Rthjc + TC
1ms T c =25 o C Single Pulse 10ms 100ms
1 1 10 100
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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AP70L02GS/P
16
10000
f=1.0MHz
14
I D =33A V DS =20V
VGS , Gate to Source Voltage (V)
12
10
8
C (pF)
1000
Ciss Coss
6
4
Crss
2
0 0 5 10 15 20 25 30 35 40 45 50
100 1 6 11 16 21 26 31
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
2
IS(A)
T j =150 o C
T j =25 o C
1
VGS(th) (V)
1 0 1.1 1.3 1.5 -50
0.1 0.1 0.3 0.5 0.7 0.9
0
50
100
150
V SD (V)
T j , Junction Temperature(
o
C)
Fig 11. Forward C.