2SC3058A POWER TRANSISTOR Datasheet

2SC3058A Datasheet, PDF, Equivalent


Part Number

2SC3058A

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3058A Datasheet


2SC3058A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3058A
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For switching regulator and DC/DC
converter applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
600
450
7
30
200
200
-65~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
/W

2SC3058A
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=20A; IB=4A
VBE(sat) Base-emitter saturation voltage
IC=20A; IB=4A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
fT Transition frequency
IC=4A ; VCE=10V
COB Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2SC3058A
MIN TYP. MAX UNIT
450 V
600 V
7V
1.0 V
1.5 V
100 µA
100 µA
15 50
10 40
30 MHz
420 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3058A DESCRIPTIO N ·With TO-3 package ·High voltage ,h igh speed APPLICATIONS ·For switching regulator and DC/DC converter applicati ons PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outl ine (TO-3) and symbol DESCRIPTION Abso lute maximum ratings(Ta=25 ) SYMBOL VCB O VCEO VEBO IC PT Tj Tstg PARAMETER Col lector-base voltage Collector-emitter v oltage Emitter-base voltage Collector c urrent Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector C ONDITIONS VALUE 600 450 7 30 200 200 -6 5~200 UNIT V V V A W THERMAL CHARACTER ISTICS SYMBOL Rth j-mb PARAMETER Therma l resistance from junction to mounting base VALUE 1.0 UNIT /W SavantIC Semico nductor www.DataSheet4U.com Product Sp ecification Silicon NPN Power Transist ors CHARACTERISTICS Tj=25 unless otherw ise specified PARAMETER Collector-emitter breakdown voltage Collec.
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