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2SC3060 Dataheets PDF



Part Number 2SC3060
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3060 Datasheet2SC3060 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators ·Class C and D amplifiers ·Deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3060 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC.

  2SC3060   2SC3060



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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators ·Class C and D amplifiers ·Deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3060 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 PW /25µs,Duty cycle/50% Open emitter Open base Open collector CONDITIONS VALUE 1200 850 7 5 8 3 150 175 -65~175 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=10mA ;RBE=> IC=1mA; IE=0 IE=1mA; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=1000V; IE=0 ICBO Collector cut-off current VCB=1000V; IE=0, TC=100 IEBO hFE fT Cob Emitter cut-off current DC current gain Transition frequency Output capacitance VEB=6V; IC=0 IC=2A ; VCE=5V IC=0.5A ; VCE=10V IE=0; VCB=10V,f=1MHz 10 MIN 850 1200 7 2SC3060 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) TYP. MAX UNIT V V V 1.5 2.0 100 1 100 30 15 120 V V µA mA µA MHz pF Switching times tr tstg tf Rise time Storage time Fall time VCC=400V; IC=2A IB1=0.2A;IB2=-0.6A; 0.5 3.5 0.3 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3060 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .


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