2SC3086

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3086 DESCRIPTION ·With TO-220C package ·High breakdown voltage : VCBO=800V(Min) ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/3A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -55~150 PW 4300µs, Duty Cycle410% CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 3 6 1 40 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA ; RBE=B IC=1mA ; IE=0 IE=1mA ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V ;IE=0 VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V IC=0.3A ; VCE=10V f=10MHz ; VCB=10V 15 8 MIN 500 800 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO ...