2SC3041 POWER TRANSISTOR Datasheet

2SC3041 Datasheet, PDF, Equivalent


Part Number

2SC3041

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3041 Datasheet


2SC3041
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Wide area of safe operation
·High breakdown voltage
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC3041
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
PW-300µs,Duty cycle-10%
TC=25
VALUE
500
400
7
8
16
3
90
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3041
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=?
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO Collector cut-off current
VCB=400V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT Transition frequency
IC=0.8A ; VCE=10V
Cob Output capacitance
IE=0; VCB=10V,f=1MHz
Product Specification
2SC3041
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
15
8
20 MHz
80 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·Fast switching speed ·Wid e area of safe operation ·High breakdo wn voltage APPLICATIONS ·For switching regulator applications PINNING(see Fig .2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3041 Fig.1 simplified outline (TO- 3) and symbol Collector ABSOLUTE MAXIM UM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEB O IC ICP IB PC Tj Tstg PARAMETER Collec tor-base voltage Collector-emitter volt age Emitter-base voltage Collector curr ent Collector current-pulse Base curren t Collector power dissipation Junction temperature Storage temperature TC=25 P W -300µs,Duty cycle-10% Open emitter O pen base Open collector CONDITIONS VALU E 500 400 7 8 16 3 90 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor w ww.DataSheet4U.com Product Specificati on Silicon NPN Power Transistors CHARA CTERISTICS Tj=25 unless otherwise speci fied PARAMETER Collector-emitter breakdown voltage Collector-base bre.
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