2SC3092 POWER TRANSISTOR Datasheet

2SC3092 Datasheet, PDF, Equivalent


Part Number

2SC3092

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3092 Datasheet


2SC3092
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·500V/7A switching regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC3092
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICP Collector current-peak
PW.300µs, Duty Cycle.10%
IB Base current
PC Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
800
500
7
7
14
3
90
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3092
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3092
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=@
V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A
VBE(sat) Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.6A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V, f=1MHz
fT Transition frequency
IC=0.6 A ; VCE=10V
Switching times
500 V
800 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
80 pF
18 MHz
ton Turn-on time
ts Storage time
tf Fall time
IC=4A; IB1=0.8A;IB2=-1.6A
VCC=200V ,RL=50F
0.5 µs
3.0 µs
0.3 µs
hFE-1 classifications
L MN
15-30 20-40 30-50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·High breakdown voltage ·F ast switching speed. ·Wide area of saf e operation APPLICATIONS ·500V/7A swit ching regulator applications PINNING(se e Fig.2) PIN 1 2 3 Base Emitter DESCRIP TION 2SC3092 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCE O VEBO IC ICP IB PC Tj Tstg PARAMETER C ollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base cu rrent Collector power dissipation Junct ion temperature Storage temperature TC= 25 PW .300µs, Duty Cycle.10% CONDITION S Open emitter Open base Open collector VALUE 800 500 7 7 14 3 90 150 -55~150 UNIT V V V A A A W SavantIC Semiconduc tor www.DataSheet4U.com Product Specif ication Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-bas.
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