POWER TRANSISTOR. 2SC3117 Datasheet


2SC3117 TRANSISTOR. Datasheet pdf. Equivalent


Part Number

2SC3117

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3117 Datasheet


2SC3117
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-126 package
·Complement to type 2SA1249
·High breakdown voltage
·Large current capacity
APPLICATIONS
·Color TV sound output;converters;
Inverters’ applications
·160V/1.5A switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SC3117
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
180
160
6
1.5
2.5
1.0
10
150
-55~150
UNIT
V
V
V
A
A
W

2SC3117
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=<
V(BR)CBO Collector-base breakdown voltage
IC=10µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10µA ; IC=0
VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA
VBEsat
Base-emitter saturation voltage
IC=500mA; IB=50mA
ICBO Collector cut-off current
VCB=120V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=100mA ; VCE=5V
hFE-2
DC current gain
IC=10mA ; VCE=5V
fT Transition frequency
IC=50mA ; VCE=10V
Cob Output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2SC3117
MIN TYP. MAX UNIT
160 V
180 V
6V
0.13 0.45
V
0.85 1.2
V
1.0 µA
1.0 µA
100 400
90
120 MHz
22 pF
hFE-1 Classifications
RS
T
100-200 140-280 200-400
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -126 package ·Complement to type 2SA12 49 ·High breakdown voltage ·Large cur rent capacity APPLICATIONS ·Color TV s ound output;converters; Inverters’ ap plications ·160V/1.5A switching applic ations PINNING PIN 1 2 3 Emitter Collec tor;connected to mounting base Base DES CRIPTION 2SC3117 Absolute maximum rat ings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC I CM PARAMETER Collector-base voltage Col lector-emitter voltage Emitter-base vol tage Collector current Collector curren t-peak Ta=25 PC Collector power dissipa tion TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CON DITIONS Open emitter Open base Open col lector VALUE 180 160 6 1.5 2.5 1.0 W UN IT V V V A A SavantIC Semiconductor ww w.DataSheet4U.com Product Specificatio n Silicon NPN Power Transistors CHARAC TERISTICS Tj=25 unless otherwise specif ied PARAMETER Collector-emitter breakdown voltage Collector-base breakd.
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