POWER TRANSISTOR. 2SC3146 Datasheet


2SC3146 TRANSISTOR. Datasheet pdf. Equivalent


Part Number

2SC3146

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3146 Datasheet


2SC3146
SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High switching speed
·High DC current gain
·Wide area of safe operation
·Complement to type 2SA1260
APPLICATIONS
·60V/7A for High-Speed Drivers Applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3146
ABSOLUTE MAXIMUM RATINGS (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current-DC
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
Ta=25
VALUE
70
60
5
7
40
1.75
125
-55~125
UNIT
V
V
V
A
W

2SC3146
SavantIC Semiconductor
Silicon NPN Darlington Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
VCE(sat)-1 Collector-emitter saturation voltage IC=3.5A ,IB=7mA
VCE(sat)-2 Collector-emitter saturation voltage IC=3.5A ,IB=7mA
ICBO Collector cut-off current
VCB=40V, IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=3.5A ; VCE=2V
Product Specification
2SC3146
MIN TYP. MAX UNIT
60 V
70 V
1.5 V
2.0 V
0.1 mA
3.0 mA
2000
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Darlington Power Transistors DESCRIPTIO N ·With TO-220C package ·High switchi ng speed ·High DC current gain ·Wide area of safe operation ·Complement to type 2SA1260 APPLICATIONS ·60V/7A for High-Speed Drivers Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3 146 ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Coll ector-base voltage Collector-emitter vo ltage Emitter-base voltage Collector cu rrent-DC TC=25 PC Collector power dissi pation Ta=25 Tj Tstg Junction temperatu re Storage temperature 1.75 125 -55~125 CONDITIONS Open emitter Open base Open collector VALUE 70 60 5 7 40 W UNIT V V V A SavantIC Semiconductor www.DataS heet4U.com Product Specification Sili con NPN Darlington Power Transistors CH ARACTERISTICS Tj=25 unless otherwise sp ecified PARAMETER Collector-emitter bre akdown voltage Collector-base breakdown voltage Collector-emitter sat.
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