2SC3148 POWER TRANSISTOR Datasheet

2SC3148 Datasheet, PDF, Equivalent


Part Number

2SC3148

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3148 Datasheet


2SC3148
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage:
VCEO=800V(Min)
·Excellent switching time:
tr=1.0µs(Max.)
tf=1.0µs(Max.@IC=0.8A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3148
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
900
800
7
3
5
1
1.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3148
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
Product Specification
2SC3148
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
800
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
900
V
VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A
0.6 V
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
1.2 V
ICBO Collector cut-off current
VCB=800V ;IE=0
100 µA
IEBO Emitter cut-off current
VEB=7V; IC=0
1 mA
hFE DC current gain
IC=0.8A ; VCE=5V
10
Switching times
tr Rise time
tstg Storage time
tf Fall time
VCC@400V; IC=0.8A
IB1=0.08A;IB2=-0.20A;
RL=50B;Duty cycleD1%
1.0 µs
4.0 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -220C package ·High collector breakdow n voltage: VCEO=800V(Min) ·Excellent s witching time: tr=1.0µs(Max.) tf=1.0µ s(Max.@IC=0.8A 2SC3148 APPLICATIONS Switching regulator and high voltage s witching applications ·High speed DC-D C converter applications PINNING PIN 1 2 3 Base Collector;connected to mountin g base Emitter DESCRIPTION Absolute ma ximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Col lector-base voltage Collector-emitter v oltage Emitter-base voltage Collector c urrent Collector current-peak Base curr ent Ta=25 Collector dissipation TC=25 J unction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 5 1 1.5 W UNIT V V V A A A Savant IC Semiconductor www.DataSheet4U.com P roduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETE.
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